Spin-dependent current in silicon p-n junction diodes

Мова статті: 
Автор(и) статті: 
Tretyak O.V., Kozonushchenko O.I., Krivokhizha K.V., Revenko A.S.
Вихідні данні статті: 
Semiconductor Physics, Quantum Electronics & Optoelectronics. - 2010. - V. 13, №1. - р. 95-97.
Назва журналу: 
Semiconductor Physics, Quantum Electronics & Optoelectronics
Рік публікації: 
Ключові слова: 
EDMR; ESR; polished surface; paramagnetic states; inversion layer.
Ключове слово: 
electrically detected paramagnetic resonance
Ключове слово: 
spin-dependent process
Ключове слово: 
paramagnetic states

We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
The dependence of relative changes in the amplitude of a signal under resonance conditions and the total value of current through the diode were investigated. We have found the presence of inversion channel on the surface of p-n junction and proposed the model of the influence of spin resonance on the channel conductivity. The upper value of the time constant inherent to the spin-dependent process was determined as approximately 10~6s . The influence of the spin-dependent process on the charge state in inversion channel has been discussed.

Назва підрозділу: 
ІНСТИТУТ ВИСОКИХ ТЕХНОЛОГІЙ Матеріали дозволено використовувати на умовах GNU FDL без незмінюваних секцій та Creative Commons Attribution/Share-Alike
Дизайн: Інститут високих технологій
Ivan Ivanov