Features of Atomic and Electronic Structure of Oxides on Porous Silicon Surface According to XANES Data

Мова статті: 
Автор(и) статті: 
E. P. Domashevskaya, V. A. Terekhov, S. Yu. Turishchev, D. A. Khoviv, V. A. Skryshevskii, I. V. Gavril’chenko
Вихідні данні статті: 
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2010, 4 (3), P.384-390
Назва журналу: 
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Рік публікації: 
Ключові слова: 
silicon, absorption, nanocrystals, boron
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Based on synchrotron research of the fine structure main parameters of SiL 2, 3 X-ray absorption edges (X-ray absorption near edge structure (XANES)) in porous silicon on boron-doped Si(100) wafers, the thickness of the surface oxide layer and the degree of distortions of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the oxide layer formed on the amorphous layer coating nanocrystals of porous silicon exceeds the thickness of the native oxide on the surface of Si(100) : P and Si(100) : B single-crystal (100) silicon wafers by several times. Distortion of the silicon-oxygen tetrahedron, i.e., the basic unit of silicon oxide, is accompanied by Si-O bond stretching and an increase in the angle between Si-O-Si bonds.

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Кафедра нанофізики конденсованих середовищ
ІНСТИТУТ ВИСОКИХ ТЕХНОЛОГІЙ Матеріали дозволено використовувати на умовах GNU FDL без незмінюваних секцій та Creative Commons Attribution/Share-Alike
Дизайн: Інститут високих технологій
Ivan Ivanov