Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2

Мова статті: 
Англійська
Автор(и) статті: 
Bunak S.V., Buyanin A.A., Ilchenko V.V. , Marin V.V., Melnik V.P. , Khacevich I.M. , Tretyak O.V., Shkavro A.G.
Вихідні данні статті: 
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010. V. 13, N 1, p. 12-18.
Назва журналу: 
Semiconductor Physics, Quantum Electronics & Optoelectronics
Рік публікації: 
2010
Volume: 
13
Issue: 
1
Ключові слова: 
nanocluster, static conductance, dynamic conductance, negative differential capacitance, memorizing effect.
Ключове слово: 
nanocluster
Ключове слово: 
negative differential capacitance

The theoretical and experimental investigations of electrical properties of the SiOvSi-ncs/SiOj'Si structures grown by high temperature annealing SiO>;. X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C—V characteristics, static and dynamic conductance of investigated structxires has been clearly observed. As a result of theoretical modeling, C — V dependences have been calculated. The experimentally obtained negative constitxient of differential capacitance has been qualitatively described. It has been experimentally found that the SiOvSi-ncs SiOvSi structures with the tunnel dielectric layer revealed the effect of memorizing.

Назва підрозділу: 
ІВТ
Кафедра нанофізики конденсованих середовищ
НДЧ
ІНСТИТУТ ВИСОКИХ ТЕХНОЛОГІЙ Матеріали дозволено використовувати на умовах GNU FDL без незмінюваних секцій та Creative Commons Attribution/Share-Alike
Дизайн: Інститут високих технологій
Ivan Ivanov