Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting
Автори книги: 
Editors: Nazarov, A., Francis, B., Valeriya, K., Flandre, D. (Eds.); auth: Valeriy A. Skryshevsky, Tetiana Serdiuk, Yuriy E. Zakharko, Sergei A. Alekseev, Alain Géloën and Vladimir Lysenko
Видавництво: 
Springer International Publishing
Рік: 
2014
Кількість сторінок: 
467
Мова: 
Англійська
ISBN: 
978-3-319-08803-7
Підрозділ: 
Кафедра нанофізики конденсованих середовищ

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

 

Part I

Nanoscale CMOS Materials and Devices Engineered Substrates for Advanced CMOS Technology
Nodes and More-Than-Moore Applications . . . . . . . . . . . . . . . . . . . . 3

Konstantin K. Bourdelle
Perspectives of UTBB FD SOI MOSFETs for Analog and RF Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Valeriya Kilchytska, Sergej Makovejev, Mohd Khairuddin Md Arshad,
Jean-Pierre Raskin and Denis Flandre
Challenges and Solutions for Very Low Energy Computation . . . . . . . 47

Francis Balestra
High-Performance Tunnel FETs on Advanced FDSOI Platform . . . . . 59

Cyrille Le Royer, Anthony Villalon, Mikaël Cassé, David Cooper,
Jean-François Damlencourt, Jean-Michel Hartmann, Claude Tabone
and Sorin Cristoloveanu
Invariance of DC and RF Characteristics of Mechanically
Flexible CMOS Technology on Plastic . . . . . . . . . . . . . . . . . . . . . . . . 81

Aurelien Lecavelier des Etangs-Levallois, Justine Philippe,
Sylvie Lepilliet, Yoann Tagro, François Danneville,
Jean-François Robillard, Christine Raynaud, Daniel Gloria,
Jacek Ratajczak and Emmanuel Dubois
Tri-Dimensional A2-RAM Cell: Entering the Third Dimension . . . . . . 105

Francisco Gámiz, Noel Rodriguez, Carlos Navarro,
Carlos Marquez and Sorin Cristoloveanu

Part II

Beyond CMOS Materials, Devices and Their Diagnostic
Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-Based Silicon Spin FETs . . . . . . . . . . . . . . . . . 127

Dmitri Osintsev, Viktor Sverdlov and Siegfried Selberherr
Quantum Noise in Nanotransistors. . . . . . . . . . . . . . . . . . . . . . . . . . . 151

Alexander Orlikovsky, Vladimir Vyurkov, Igor Semenikhin
and Vladimir Borzdov
Non-volatile Memory of New Generation and Ultrafast
IR Modulators Based on Graphene on Ferroelectric Substrate . . . . . . 163

Maksym V. Strikha
Scanning Probe Microscopy in Practical Diagnostic:
3D Topography Imaging and Nanometrology . . . . . . . . . . . . . . . . . . . 179

Petro M. Lytvyn
Part III New Functional Nanomaterials and Nanoscaled
Devices for Energy Harvesting, Light Emission, Optoelectronics
and THz Range
Towards Self-Powered Systems: Using Nanostructures
to Harvest Ambient Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223

Gustavo Ardila, Anne Kaminski-Cachopo, Marco Pala,
Alessandro Cresti, Laurent Montès, Vincent Consonni,
Ronan Hinchet, Jérôme Michallon, Mehdi Daanoune,
Mauro Zanuccoli, Claudio Fiegna and Mireille Mouis
Energy Harvesting Using THz Electronics . . . . . . . . . . . . . . . . . . . . . 241

Stephen Hall, Ivona Z. Mitrovic, Naser Sedghi, Yao-chun C. Shen,
Yi Huang and Jason F. Ralph
Uncooled Detector Challenges for mm/sub-mm Range . . . . . . . . . . . . 267

Fedor Sizov, Mykola Sakhno and Alexandr Golenkov
Structural and Luminescent Properties of Carbonized Silicon
Oxide Thin Layers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 297

Andrii V. Vasin
viii Contents
Preparation, Luminescent Properties and Bioimaging
Application of Quantum Dots Based on Si and SiC. . . . . . . . . . . . . . . 323

Valeriy A. Skryshevsky, Tetiana Serdiuk, Yuriy E. Zakharko,
Sergei A. Alekseev, Alain Géloën and Vladimir Lysenko
Rare Earth Implanted MOS Structures: Advantages
and Drawbacks for Optoelectronic Applications . . . . . . . . . . . . . . . . . 349

Lars Rebohle
Part IV NanoSensors and MEMS/NEMS
Silicon and Germanium Junctionless Nanowire Transistors
for Sensing and Digital Electronics Applications. . . . . . . . . . . . . . . . . 367

Yordan M. Georgiev, Ran Yu, Nikolay Petkov, Olan Lotty,
Adrian M. Nightingale, John C. deMello, Ray Duffy
and Justin D. Holmes
SOI-Based Microsensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 389

Daniel Tomaszewski, Michał Zaborowski, Krzysztof Kucharski,
Jacek Marczewski, Krzysztof Doman´ski, Magdalena Ekwin´ska,
Paweł Janus, Tomasz Bieniek, Grzegorz Głuszko,
Bohdan Jaroszewicz and Piotr Grabiec
Photoexcitation and Recombination of Charge Carriers
in Si/Ge Nanoheterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417

Vladimir S. Lysenko, Sergey V. Kondratenko and Yuriy N. Kozyrev
SOI-Nanowire Biosensors for High-Sensitivity Protein
and Gene Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 445

Yuri D. Ivanov, Tatyana O. Pleshakova, Vladimir P. Popov,
Olga V. Naumova, Alexander L. Aseev and Alexander I. Archakov

ІНСТИТУТ ВИСОКИХ ТЕХНОЛОГІЙ Матеріали дозволено використовувати на умовах GNU FDL без незмінюваних секцій та Creative Commons Attribution/Share-Alike
Дизайн: Інститут високих технологій
Ivan Ivanov