Ilchenko Volodymyr

Visiting Card
Role: 
Professor
Degree: 
D.Sc.
Position: 
Професор, директор ІВТ
Department: 
Department of Nanophysics of Condensed Matter
Tel.: 
+380 (44) 521-3583
Tel.: 
+380 (44) 252-3566

Birth: 1960 Marital status: Married 

 
EDUCATION AND PROFESSIONAL CAREER:
 
1981 Diploma for Graduation in Radiophysics and Electronics Degree:
Engineer-reseach worker in Radiophysics (M.S.), 
Taras Shevchenko National University of Kyiv.
1981-1984 Post-graduate courses at the Department of Semiconductor Electronics, Radiophysics Faculty 
Taras Shevchenko National University of Kyiv
1984 -1986 Assistant professor at the Department of Semiconductor Physics, Radiophysics Faculty
Taras Shevchenko National University of Kyiv.
1987 Candidate of Sciences in Physics and Mathematics (Ph.D.).
1992 Certificate on Associate Professor.
1999-2000 Visiting Associate Professor in Chiao-Tung University,
Electronics Engineering Department, Hsinchu, Taiwan
2000-2001 Visiting Professor in Industrial Research Technology Institute,
Hsinchu, Taiwan
2001-2005 Associate Professor (Docent) 
Department of Semiconductor Electronics. Radiophysics Faculty
Taras Shevchenko National University of Kyiv.
2005-2008 Doctoral student at Radiophysics Faculty, Department of Semiconductor Electronics.
2008-2009 Associate Professor (Docent) 
Department of Semiconductor Electronics. Radiophysics Faculty
Taras Shevchenko National University of Kyiv.
2009-2015 Vice-director of Institute of high technologies of
Taras Shevchenko National University of Kyiv.
2012 Doctor of science in Physics and Mathematics.
2013 Professor of Department of Nanophysics of condensed state of Institute of high technologies
 2015-present: Director of Institute of high technologies of
Taras Shevchenko National University of Kyiv. 
 
 
RESEARCH GRANTS AND MANAGEMENT OF SCIENTIFIC ACTIVITIES:
1993-1997:
Grant, awarded by the State Committee of Science and Technology of Ukraine.
1993-1997:
Grant, awarded by the Ministry of Education of Ukraine.
1992-1999:
Responsible Executor of Projects, awarded by the State Committee of Science and Technology of Ukraine.
2000-2001: 
Grant awarded by National Science Council Contract No. NSC 89-2215-E-009-013 and the Lee- MTI Center of National Chiao Tung University.
2001-2008: 
National Science Council in Taiwan Contract No. NSC 96-2221-E-009-218 and the ATU Program of Ministry of Education of Taiwan Contract No. 96W803.
2009-2012:
Responsible Executor of 6 Projects, awarded by the Ministry Education and Science of Ukraine.
 
QUALIFICATION AND SKILLS:
Scientific researcher on the experimental physics of semiconductor, interface electronic processes, low-dimensional and quantum systems, nanophysics and nanotechnologies, functional and nano- materials. Scientific leadership of a research team with the following duties: initiating research, management of research grants, and managing of the team's work. 
Teaching of students and postgraduate students on:
- quantum physics;
- physics of amorphous state; 
- low- dimensional electronic systems;
- computer and network technologies, WEB technologies;
- semiconductor physics and electronics;
- computer data processing and automation of scientific research;
- nanophysics and nanotechnologies;
- functional and nano- materials. 
 
RESEARCH INTERESTS:
Investigation of electronic processes in low-dimension systems, amorphous state, at the surface, interfaces, and thin quantum-size layers. This field includes the following: i) Spin-dependent phenomena in electronic structures; ii) Tunneling – resonant electron transport in multi-layers low-dimension structures; iii) Classical and quantum effects for submicron and nano semiconductor structures; iv) Electrical properties of semiconductors heterostructures with quantum dots and nanoclusters.
 
SELECTED PUBLICATIONS:
1. V-A characteristic of metall-amorphous silicon contacts for exponential distributionof density of localized conditions V.V.Ilchenko, V.I.Strikha ( "Nauka", Sankt-Peterburg department, Physics and Technics of semiconductors [ Semiconductors ], 1984, V. 18, iss.5, p. 873-876 ).
2. Current transport mechanisms for the metal-amorphous silicon contacts. V.V.Ilchenko, V.I.Strikha ( North-Holland Physics Publishing Division, Journal of Non-Crystalline Solids, 1987, V. 90, No.1-3, p. 335- 338 ).
3. Electrophysical properties of contacts with Schottky barrier on amorphous hydrogenated silicon. A.A.Andreev, V.V.Ilchenko, M.M.Mezdrogina, V.I.Strikha ("Nauka", Sankt-Peterburg department, Physics and Technics of semiconductors[ Semiconductors], 1988, V. 22, iss.3, p. 461-464 ).
4. CO2-Laser anneling of Al/a-Si:H contact. V.V.Ilchenko, V.A.Skryshevsky, H.Gleskova, V.I.Strikha ( Czechoslovak Journal of Physics, 1993, V. 43, No. 2, p. 169-178 ).
5. DLTS characterization of InAs self-assembled quantum dots. V.V.Ilchenko, S.D.Lin, C.P.Lee, O.V.Tretyak  (2000 IEEE International Symposyum on Compound Semiconductors. – Proceedings of the IEEE Twenty-Seventh International on Compound Semiconductors held in Monterey, California, 2-5 October 2000, p. 43-48).
6. Deep level transient spectroscopy characterization of InAs self-assembled quantum dots. V.V.Ilchenko, S.D.Lin, C.P.Lee and O.V.Tretyak (Journal of Applied Physics, 2001, V. 89,  No.2,  p.p. 1172-1174).
7. Ilchenko V.V., Lin S.D., Lee C.P., Tretyak O.V., Shkil M.V. Deep level transient spectroscopy evidence of point defects associated with InAs/GaAs quantum dots. Functional Materials, 2003, V. 10, No.4, p.p. 707-710.
8. Shkil M.V., Ilchenko V.V., Tretyak O.V., Chen P.S., Pei Z.W., Tsai M.J. C–V and AS study of self-assembled Ge islands in Si p-n junction. Sensor Electronics and Microsystem Technologies, 2004, No.2, p.15-19.
9. Chen P.S., Pei Z.W., Tsai M.J., Shkil M.V., Ilchenko V.V., Tretyak O.V. C–V and AS study of self-assembled Ge islands in Si p-n junction. WSEAS Transactions on electronics, 2004, April, V. 1, issue 2, p.p. 241-244.
10. Lin S.D., Lee C.P., Ilchenko V.V., Marin V.V., Shkil M.V., Buyanin A.A., Panarin K.Y., Tretyak O.V. Investigation of negative differencial capacitance-voltage dependences of Schottky diodes structures with GaAs/InAs QDs. Sensor Electronics and Microsystem Technologies, 2006, №2, p. 3-9.
11. Lin S.D., Lee C.P., Ilchenko V.V., Sheka D.I., Tretyak O.V., Korol A.M., Nosenko I.V. Coherent tunneling in a semiconductor system: Double barrier resonant-tunneling structure built in the Schottky barrier. Journal of physical studies, 2007, V.11, N.3, p.294-297.
12. Lin S.D., Ilchenko V.V., Marin V.V.et al. Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature Appl. Phys. Lett., 2007.- Vol.90, P. 263114(1-3).
13. Ilchenko V.V., Lin S.D., Marin V.V., Shkil N.V., Panarin K.Y., Buyanin A.A., Tretyak O.V. Room temperature negative differential capacitance in self-assembled quantum dots. Journal of Physics D: Appl. Phys., 2008, V. 41, p.p. 235107(1-4).
14. Lin S.D., Ilchenko V.V., Marin V.V., Buyanin O.O., Panarin K.Y., Tretyak O.V. Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots. Appl. Phys. Lett., 2008, V.93, - p. 103103(1-3).
15. Bunak S.V., Buyanin A.A., Ilchenko V.V. , Marin V.V., Melnik V.P. , Khacevich I.M. , Tretyak O.V., Shkavro A.G. Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, V. 13, N 1, p.p. 12-18.
16. Ilchenko V.V., Lin S.D., Marin V.V., Tretyak O.V. Electronic properties of FET structures with QDs layer under the Gate area. Sensor Electronics and Microsystem Technologies, 2011, V. 2(8), No.1, p.79-84.
17. Bunak S.V., Ilchenko V.V. , Marin V.V., Melnik V.P. , Khacevich I.M. , Tretyak O.V., Shkavro A.G. Electrical properties of MIS structures with Si NCs. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, V. 14, No. 2, p. 241-246 .
18. Ilchenko V.V., Marin V.V., Vasyliev I S., Tretyak O.V. Admittance spectroscopy using for the determination of parameters of Si nanoclusters embedded in SiO2 Conference Proceedings of 2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO) (April 15-18, 2014 Kyiv, Ukraine), 2014, p. 86-89.
19. Romanyuk B., Melnik V., Ilchenko V. et al. Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions. Nanoscale Research Letters, 2015, V. 10(1), p. 693(1-6).
20. Romanyuk B., Melnik V., Il'chenko V. et al. Formation of shallow p-n junctions in Cz Si by low-energy carbon ion implantation. Abstracts of the 2014 ECS and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting. ECS Transactions. (Oct. 5-9, Cancun, Mexico, 2014), 2014, V.64 (11), p. 187-198.
21. Evtukh A., Bratus O., Ilchenko V., Marin V., Vasyliev I. Capacitive Properties of MIS Structures with SiOx and SixOyNz Films Containing Si Nanoclusters. Journal of Nano Research, 2016, V. 39, p. 162-168. 
22. Vasyliev I., Ilchenko V., Derenskyi V., Gerasymenko M. and Loi M.A. Admittance Spectroscopy of Charge Traps of FET Based on Nanotubes. Conference Proceedings of 2017 IEEE 37th International Scientific Conference on Electronics and Nanotechnology (ELNANO) (April 18-20, 2017 Kyiv, Ukraine), 2017, p. 198-200. 
 
Total number of scientific publications: more then 70.
Наукові публікації: 
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Дизайн: Інститут високих технологій
Ivan Ivanov